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利用薄石墨片的全视野 X 射线显微镜进行 X 射线吸收光谱学研究：通过碳 K 边进行成像和电子结构研究。

X-ray absorption spectroscopy by full-field X-ray microscopy of a thin graphite flake: Imaging and electronic structure via the carbon K-edge.

机构信息

Electron Microscopy for Materials Science (EMAT), University of Antwerp, B-2020 Antwerp, Belgium.

出版信息

Beilstein J Nanotechnol. 2012;3:345-50. doi: 10.3762/bjnano.3.39. Epub 2012 Apr 25.

DOI:10.3762/bjnano.3.39
PMID:23016137
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3388357/
Abstract

We demonstrate that near-edge X-ray-absorption fine-structure spectra combined with full-field transmission X-ray microscopy can be used to study the electronic structure of graphite flakes consisting of a few graphene layers. The flake was produced by exfoliation using sodium cholate and then isolated by means of density-gradient ultracentrifugation. An image sequence around the carbon K-edge, analyzed by using reference spectra for the in-plane and out-of-plane regions of the sample, is used to map and spectrally characterize the flat and folded regions of the flake. Additional spectral features in both π and σ regions are observed, which may be related to the presence of topological defects. Doping by metal impurities that were present in the original exfoliated graphite is indicated by the presence of a pre-edge signal at 284.2 eV.

摘要

我们证明，利用近边 X 射线吸收精细结构光谱结合全场透射 X 射线显微镜可以研究由几个石墨烯层组成的石墨薄片的电子结构。该薄片是通过使用胆酸钠进行剥离然后通过密度梯度超速离心分离来制备的。围绕碳 K 边缘的图像序列，通过使用样品的面内和面外区域的参考光谱进行分析，用于对薄片的平坦和折叠区域进行映射和光谱特征分析。在π和σ区域都观察到了其他的谱特征，这可能与拓扑缺陷的存在有关。在原始剥离石墨中存在的金属杂质的掺杂，由 284.2 eV 处的预边缘信号表明。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d9a4/3388357/f05231167c23/Beilstein_J_Nanotechnol-03-345-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d9a4/3388357/617cc1b5e515/Beilstein_J_Nanotechnol-03-345-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d9a4/3388357/d7c5d3c04896/Beilstein_J_Nanotechnol-03-345-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d9a4/3388357/f05231167c23/Beilstein_J_Nanotechnol-03-345-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d9a4/3388357/617cc1b5e515/Beilstein_J_Nanotechnol-03-345-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d9a4/3388357/d7c5d3c04896/Beilstein_J_Nanotechnol-03-345-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d9a4/3388357/f05231167c23/Beilstein_J_Nanotechnol-03-345-g004.jpg

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本文引用的文献

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Quantifying defects in graphene via Raman spectroscopy at different excitation energies.通过不同激发能量的 Raman 光谱对石墨烯中的缺陷进行定量。
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