State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Changchun 130022, People’s Republic of China.
ACS Appl Mater Interfaces. 2012 Oct 24;4(10):5704-10. doi: 10.1021/am3017653. Epub 2012 Oct 1.
A simple approach to fabricate high-efficiency annealing-free poly(3-hexylthiophene): [6,6]-phenyl C(61)-butyric acid methyl ester (P3HT:PCBM) solar cells is reported by using p-type CuI to substitute PEDOT:PSS as anode buffer layer. It is found that the P3HT:PCBM blend films deposited on CuI surface show different orientation of crystalline P3HT domains and phase separation from those deposited on PEDOT:PSS surface. A nanoscale phase separation of P3HT and PCBM with domain sizes about 10-30 nm is formed for the P3HT:PCBM blend films deposited on CuI surface. Absorption and grazing incidence X-ray diffraction (GIXRD) experiments indicate that the CuI layer not only induces the self-organization of P3HT chains into well-ordered structure but also results in the vertical orientation of π-π stacking planes of P3HT with respect to the substrate which is favorable for the hole collection in polymer solar cells. Hole-transport investigation discloses that hole mobility of the as-spincast P3HT:PCBM blend film on CuI surface is increased with 3 orders of magnitude compared to the P3HT:PCBM film deposited on PEDOT:PSS. A power conversion efficiency of 3.1% for the as-spincast P3HT:PCBM solar cell with CuI buffer layer is about 4-fold enhancement compared to 0.83% of the control device with PEDOT:PSS, and is comparable to the reported P3HT:PCBM solar cells subjected to post thermal treatments. This work implies that interfacial engineering is a promising approach for manipulating morphology of active layer and can potentially simplify the process and shorten the fabrication time of polymer solar cells in low-cost roll-to-roll manufacturing.
本工作报道了一种在不进行退火处理的情况下制备高效聚(3-己基噻吩):[6,6]-苯基 C(61)-丁酸甲酯(P3HT:PCBM)太阳能电池的简易方法,即采用 p 型碘化亚铜(CuI)取代聚(3,4-乙烯二氧噻吩):聚苯乙烯磺酸(PEDOT:PSS)作为阳极缓冲层。研究发现,沉积在 CuI 表面的 P3HT:PCBM 混合膜表现出与沉积在 PEDOT:PSS 表面的混合膜不同的结晶 P3HT 畴取向和相分离。对于沉积在 CuI 表面的 P3HT:PCBM 混合膜,形成了具有约 10-30nm 尺寸的 P3HT 和 PCBM 的纳米级相分离。吸收和掠入射 X 射线衍射(GIXRD)实验表明,CuI 层不仅诱导 P3HT 链自组装成有序结构,而且导致 P3HT 的π-π堆叠平面相对于衬底的垂直取向,这有利于聚合物太阳能电池中的空穴收集。空穴传输研究表明,与沉积在 PEDOT:PSS 上的 P3HT:PCBM 混合膜相比,沉积在 CuI 表面的旋涂 P3HT:PCBM 混合膜的空穴迁移率提高了 3 个数量级。具有 CuI 缓冲层的旋涂 P3HT:PCBM 太阳能电池的功率转换效率为 3.1%,与具有 PEDOT:PSS 的对照器件的 0.83%相比提高了约 4 倍,与报道的经过后热处理的 P3HT:PCBM 太阳能电池相当。这项工作表明,界面工程是一种操纵活性层形态的有前途的方法,并且可以潜在地简化低成本卷对卷制造中的聚合物太阳能电池的工艺并缩短其制造时间。