Lin Sheng-Di, Fu Ying-Jhe, Cheng Chun
Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan.
Opt Express. 2012 Aug 27;20(18):19850-8. doi: 10.1364/OE.20.019850.
We present the observation and analysis of long-lived exciton in individual InAs quantum dots (QDs). The general model considering the interplay between dark and bright states reveals the two key factors responsible for the long decay time: the shortened spin-flip time at elevated temperature and the imbalanced initial populations between the dark and bright states. The later one plays a key role in the unusual phenomena and leads to the possibility of spin-dependent relaxation process in QDs.
我们展示了对单个砷化铟量子点（QD）中长寿命激子的观察与分析。考虑暗态和亮态之间相互作用的通用模型揭示了导致长衰减时间的两个关键因素：温度升高时自旋翻转时间缩短，以及暗态和亮态之间初始布居不平衡。后者在这些异常现象中起关键作用，并导致量子点中自旋相关弛豫过程的可能性。
