Liu Nishuang, Tian Weiwei, Zhang Xianghui, Su Jun, Zhang Qi, Gao Yihua
Wuhan National Laboratory for Optoelectronics (WNLO), School of Physics, Huazhong University of Science and Technology (HUST), Luoyu Road 1037, Wuhan 430074, China.
Opt Express. 2012 Aug 27;20(18):20748-53. doi: 10.1364/OE.20.020748.
The giant improvement of ultraviolet response behavior of a conventional GaN p-n film structured detector by the incorporation of slanted GaN nanowires is reported. The GaN nanowires/p-n film structure shows great photoresponse performance, exhibiting a short response time <0.1 s and a high sensitivity, being stable and reproducible with an on/off current contrast ratio as high as 1800 at zero bias under 365 nm ultraviolet light irradiation. Via carefully analyzing the experiment result and the band diagram of the device, the enhancement can be predominantly attributed to the photogenerated electrons in the slanted GaN nanowires.
据报道，通过引入倾斜的氮化镓纳米线，传统氮化镓p-n薄膜结构探测器的紫外响应行为有了巨大改善。氮化镓纳米线/p-n薄膜结构展现出优异的光响应性能，响应时间短于0.1秒，灵敏度高，在365纳米紫外光照射下零偏压时开/关电流对比度高达1800，具有稳定性和可重复性。通过仔细分析实验结果和器件的能带图，这种增强主要归因于倾斜氮化镓纳米线中的光生电子。
