Chen Tai-Chang, Poochinda Kunakorn, Stoebe Thomas G
Department of Electrical Engineering, University of Washington, Seattle, WA 98195, USA.
Radiat Prot Dosimetry. 2006;119(1-4):380-5. doi: 10.1093/rpd/nci546. Epub 2006 May 26.
We report a new dosimetry concept that is built on an earlier integrated sensor concept by our group at University of Washington to integrate a radiation-dosimetry-quality Al2O3:C and a high quantum-efficiency GaN-based p-i-n photodiode on one side, and light emitting diodes (LEDs) on the opposite side as the stimulation source. The performance of the sensor has been evaluated by computer simulation, the performance of GaN photodiodes and studying the GaN films. The absorption spectrum of the GaN film was measured and indicated that the GaN photodiodes would not respond to the output wavelengths of the stimulating LEDs. The electrical properties and the performance of GaN p-i-n photodiode under irradiation were simulated. The results showed that the sensor offered comparable radiation sensitivity to current technologies and could be operated in active mode.
我们报告了一种新的剂量测定概念，该概念基于华盛顿大学我们团队早期的集成传感器概念，在一侧集成了具有辐射剂量测定质量的Al2O3:C和高量子效率的基于GaN的p-i-n光电二极管，在另一侧集成发光二极管（LED）作为刺激源。通过计算机模拟、GaN光电二极管的性能以及对GaN薄膜的研究来评估该传感器的性能。测量了GaN薄膜的吸收光谱，结果表明GaN光电二极管不会对刺激LED的输出波长产生响应。模拟了GaN p-i-n光电二极管在辐照下的电学性质和性能。结果表明，该传感器与当前技术具有相当的辐射灵敏度，并且可以在有源模式下运行。
