Kwong David, Covey John, Hosseini Amir, Zhang Yang, Xu Xiaochuan, Chen Ray T
Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, 10100 Burnet Rd. Austin, TX 78758, USA.
Opt Express. 2012 Sep 10;20(19):21722-8. doi: 10.1364/OE.20.021722.
We have investigated the feasibility of multimode polysilicon waveguides to demonstrate the suitability of polysilicon as a candidate for multilayer photonic applications. Solid Phase Crystallization (SPC) with a maximum temperature of 1000°C is used to create polysilicon on thermally grown SiO. We then measure the propagation losses for various waveguide widths on both polysilicon and crystalline silicon platforms. We find that as the width increases for polysilicon waveguides, the propagation loss decreases similar to crystalline silicon waveguides. At a waveguide width of 10 µm, polysilicon and crystalline silicon waveguides have propagation losses of 0.56 dB/cm and 0.31 dB/cm, respectively, indicating there is little bulk absorption from the polysilicon and is the lowest propagation loss for polysilicon demonstrated to date. In addition, the first 1x12 polysilicon MMI is demonstrated with a low insertion loss of -1.29dB and a high uniformity of 1.07 dB. These results vindicate the use of polysilicon waveguides of varying widths in photonic integrated circuits.
我们研究了多模多晶硅波导的可行性,以证明多晶硅作为多层光子应用候选材料的适用性。采用最高温度为1000°C的固相结晶(SPC)工艺在热生长的SiO上制备多晶硅。然后,我们测量了多晶硅和晶体硅平台上不同波导宽度的传播损耗。我们发现,随着多晶硅波导宽度的增加,其传播损耗与晶体硅波导类似地降低。在波导宽度为10 µm时,多晶硅和晶体硅波导的传播损耗分别为0.56 dB/cm和0.31 dB/cm,这表明多晶硅几乎没有体吸收,且是迄今为止所展示的多晶硅的最低传播损耗。此外,首个1x12多晶硅MMI的插入损耗低至-1.29dB,均匀性高达1.07 dB。这些结果证明了在光子集成电路中使用不同宽度的多晶硅波导是可行的。