Li Qiming, Wright Jeremy B, Chow Weng W, Luk Ting Shan, Brener Igal, Lester Luke F, Wang George T
Sandia National Laboratories, Albuquerque, New Mexico 87185-1086, USA.
Opt Express. 2012 Jul 30;20(16):17873-9. doi: 10.1364/OE.20.017873.
We demonstrate stable, single-frequency output from single, as-fabricated GaN nanowire lasers operating far above lasing threshold. Each laser is a linear, double-facet GaN nanowire functioning as gain medium and optical resonator, fabricated by a top-down technique that exploits a tunable dry etch plus anisotropic wet etch for precise control of the nanowire dimensions and high material gain. A single-mode linewidth of ~0.12 nm and >18 dB side-mode suppression ratio are measured. Numerical simulations indicate that single-mode lasing arises from strong mode competition and narrow gain bandwidth.
我们展示了由单个刚制备好的氮化镓纳米线激光器实现的稳定单频输出，其工作状态远高于激光阈值。每个激光器都是一根线性、双面的氮化镓纳米线，兼具增益介质和光学谐振器的功能，通过一种自上而下的技术制造而成，该技术利用可调谐干法蚀刻加各向异性湿法蚀刻来精确控制纳米线尺寸并实现高材料增益。测量得到的单模线宽约为0.12纳米，边模抑制比大于18分贝。数值模拟表明，单模激光发射源于强烈的模式竞争和狭窄的增益带宽。
