Fan Xinye, Shi Jiawang, Chen Yiren, Miao Guoqing, Jiang Hong, Song Hang
Key Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200438, China.
Micromachines (Basel). 2024 Sep 25;15(10):1188. doi: 10.3390/mi15101188.
This review describes the development history of group-III nitride light-emitting diodes (LEDs) for over 30 years, which has achieved brilliant achievements and changed people's lifestyles. The development process of group-III nitride LEDs is the sum of challenges and solutions constantly encountered with shrinking size. Therefore, this paper uses these challenges and solutions as clues for review. It begins with reviewing the development of group-III nitride materials and substrates. On this basis, some key technological breakthroughs in the development of group-III nitride LEDs are reviewed, mainly including substrate pretreatment and p-type doping in material growth, the proposal of new device structures such as nano-LED and quantum dot (QD) LED, and the improvement in luminous efficiency, from the initial challenge of high-efficiency blue luminescence to current challenge of high-efficiency ultraviolet (UV) and red luminescence. Then, the development of micro-LEDs based on group-III nitride LEDs is reviewed in detail. As a new type of display device, micro-LED has drawn a great deal of attention and has become a research hotspot in the current international display area. Finally, based on micro-LEDs, the development trend of nano-LEDs is proposed, which is greener and energy-saving and is expected to become a new star in the future display field.
这篇综述描述了III族氮化物发光二极管（LED）30多年的发展历程，其取得了辉煌成就并改变了人们的生活方式。III族氮化物LED的发展过程是随着尺寸不断缩小而不断遇到挑战并解决挑战的总和。因此，本文以这些挑战和解决方案为线索进行综述。首先回顾III族氮化物材料和衬底的发展。在此基础上，综述了III族氮化物LED发展中的一些关键技术突破，主要包括材料生长中的衬底预处理和p型掺杂、纳米LED和量子点（QD）LED等新器件结构的提出以及发光效率的提高，从最初高效蓝光发光的挑战到当前高效紫外（UV）和红光发光的挑战。然后，详细综述了基于III族氮化物LED的微LED的发展。作为一种新型显示器件，微LED引起了广泛关注并成为当前国际显示领域的研究热点。最后，基于微LED，提出了纳米LED的发展趋势，其更绿色节能，有望成为未来显示领域的一颗新星。
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