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局部氧化硅(LOCOS)技术对光子线波导的影响。

Impact of LOCOS techniques on photonic wire waveguides.

作者信息

Xiong Yule, Ibrahim Marc, Ye Winnie N

机构信息

Department of Electronics, Carleton University, Ottawa, Ontario, Canada.

出版信息

Appl Opt. 2012 Oct 10;51(29):7089-93. doi: 10.1364/AO.51.007089.

Abstract

We use the LOCal oxidation of silicon (LOCOS) method as a fabrication technique to define submicrometer photonic waveguides. We attempted fabricating the wire waveguides with two different masking processes, one with a stack of pad oxide and silicon nitride layers, and the other with a single silicon nitride layer. The smallest waveguide we achieved had a cross-section profile of 280 nm×650 nm. The propagation loss of the waveguides was measured by the cut-back method, and the bending loss was measured by employing the serpentine pattern. The minimum propagation loss achieved was 8.78 dB/cm and the bending loss was 0.0089 dB/90° bend for a 5 μm bending radius.

摘要

我们使用硅的局部氧化(LOCOS)方法作为一种制造技术来定义亚微米级光子波导。我们尝试通过两种不同的掩膜工艺制造线波导,一种是使用氧化层和氮化硅层的堆叠,另一种是使用单个氮化硅层。我们所实现的最小波导的横截面轮廓为280纳米×650纳米。通过截断法测量波导的传播损耗,并采用蛇形图案测量弯曲损耗。对于5微米的弯曲半径,所实现的最小传播损耗为8.78分贝/厘米,弯曲损耗为0.0089分贝/90°弯曲。

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