Säynätjoki A, Karvonen L, Alasaarela T, Tu X, Liow T Y, Hiltunen M, Tervonen A, Lo G Q, Honkanen S
Aalto University, School of Electrical Engineering, Espoo, Finland.
Opt Express. 2011 Dec 19;19(27):26275-82. doi: 10.1364/OE.19.026275.
We demonstrate low-loss silicon slot waveguides patterned with 248 nm deep-UV lithography and filled with atomic layer deposited aluminum oxide. Propagation losses less than 5 dB/cm are achieved with the waveguides. The devices are fabricated using low-temperature CMOS compatible processes. We also demonstrate simple, compact and efficient strip-to-slot waveguide couplers. With a coupler as short as 10 µm, coupling loss is less than 0.15 dB. The low-index and low-nonlinearity filling material allows nonlinearities nearly two orders of magnitude smaller than in silicon waveguides. Therefore, these waveguides are a good candidate for linear photonic devices on the silicon platform, and for distortion-free signal transmission channels between different parts of a silicon all-optical chip. The low-nonlinearity slot waveguides and robust couplers also facilitate a 50-fold local change of the waveguide nonlinearity within the chip by a simple mask design.
我们展示了通过248纳米深紫外光刻技术制作并填充原子层沉积氧化铝的低损耗硅槽波导。这些波导实现了低于5分贝/厘米的传播损耗。这些器件采用低温互补金属氧化物半导体兼容工艺制造。我们还展示了简单、紧凑且高效的条形到槽形波导耦合器。对于短至10微米的耦合器,耦合损耗小于0.15分贝。低折射率和低非线性的填充材料使非线性比硅波导小近两个数量级。因此,这些波导是硅平台上线性光子器件以及硅全光芯片不同部分之间无失真信号传输通道的理想选择。低非线性槽波导和坚固的耦合器还通过简单的掩模设计实现了芯片内波导非线性50倍的局部变化。