Cardenas Jaime, Poitras Carl B, Robinson Jacob T, Preston Kyle, Chen Long, Lipson Michal
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY, USA.
Opt Express. 2009 Mar 16;17(6):4752-7. doi: 10.1364/oe.17.004752.
We demonstrate low loss silicon waveguides fabricated without any silicon etching. We define the waveguides by selective oxidation which produces ultra-smooth sidewalls with width variations of 0.3 nm. The waveguides have a propagation loss of 0.3 dB/cm at 1.55 microm. The waveguide geometry enables low bending loss of approximately 0.007 dB/bend for a 90 degrees bend with a 50 microm bending radius.
我们展示了无需任何硅蚀刻即可制造的低损耗硅波导。我们通过选择性氧化来定义波导,这种方法能产生超光滑的侧壁,宽度变化仅为0.3纳米。这些波导在1.55微米波长处的传播损耗为0.3分贝/厘米。对于半径为50微米的90度弯曲,波导结构能实现约0.007分贝/弯曲的低弯曲损耗。