Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea.
Phys Rev Lett. 2012 Oct 5;109(14):146601. doi: 10.1103/PhysRevLett.109.146601. Epub 2012 Oct 1.
Material with a nontrivial topology in its electronic structure enforces the existence of helical Dirac fermionic surface states. We discover emergent topological phases in the stacked structures of topological insulator and band insulator layers where the surface Dirac fermions interact with each other with a particular helicity ordering. Using first-principles calculations and a model Lagrangian, we explicitly demonstrate that such helicity ordering occurs in real materials of ternary chalcogen compounds and determines their topological-insulating phase. Our results reveal the rich collective nature of interacting surface Dirac fermions and pave the way for utilizing topological phases for technological devices such as nonvolatile memories.
具有非平凡拓扑电子结构的材料强制存在螺旋狄拉克费米子表面态。我们在拓扑绝缘体和带绝缘体层的堆叠结构中发现了新兴拓扑相,其中表面狄拉克费米子以特定的螺旋有序相互作用。利用第一性原理计算和模型拉格朗日量,我们明确地证明了这种螺旋有序出现在三元硫属化合物的实际材料中,并决定了它们的拓扑绝缘相。我们的结果揭示了相互作用的表面狄拉克费米子的丰富集体性质,并为利用拓扑相制造技术设备(如非易失性存储器)铺平了道路。