Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany.
Nanotechnology. 2012 Nov 16;23(45):455203. doi: 10.1088/0957-4484/23/45/455203. Epub 2012 Oct 19.
GaN nanowire ensembles with axial In(x)Ga(1-x)N multi-quantum-wells (MQWs) were grown by molecular beam epitaxy. In a series of samples we varied the In content in the MQWs from almost zero to around 20%. Within the nanowire ensemble, the MQWs fluctuate strongly in composition and size. Statistical information about the composition was obtained from x-ray diffraction and Raman spectroscopy. Photoluminescence at room temperature was obtained in the range of 2.2 to 2.5 eV, depending on In content. Contrary to planar MQWs, the intensity increases with increasing In content. We compare the observed emission energies with transition energies obtained from a one-dimensional model, and conclude that several mechanisms for carrier localization affect the luminescence of these three-dimensional structures.
通过分子束外延生长了具有轴向 In(x)Ga(1-x)N 多量子阱（MQWs）的 GaN 纳米线组件。在一系列样品中，我们将 MQWs 中的 In 含量从几乎为零变化到约 20%。在纳米线组件中，MQWs 在组成和尺寸上强烈波动。通过 X 射线衍射和拉曼光谱获得了关于组成的统计信息。室温下的光致发光在 2.2 到 2.5 eV 的范围内，取决于 In 含量。与平面 MQWs 相反，强度随 In 含量的增加而增加。我们将观察到的发射能量与从一维模型获得的跃迁能量进行比较，并得出结论，几种载流子局域化机制会影响这些三维结构的发光。
