Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States.
ACS Nano. 2012 Nov 27;6(11):9496-502. doi: 10.1021/nn304285m. Epub 2012 Nov 2.
We demonstrate a method using photoactivation localization microscopy (PALM) in a soft-material system, with a rhodamine-lactam dye that is activated by both ultraviolet light and protonation, to reveal the nanoscale photoacid distribution in a model photoresist. Chemically amplified resists are the principal lithographic materials used in the semiconductor industry. The photoacid distribution generated upon exposure and its subsequent evolution during post-exposure bake is a major limiting factor in determining the resolution and lithographic quality of the final developed resist image. Our PALM data sets resolve the acid distribution in a latent image with subdiffraction limit accuracy. Our overall accuracy is currently limited by residual mechanical drift.
我们展示了一种在软物质体系中使用光激活定位显微镜（PALM）的方法，该方法使用一种罗丹明内酰胺染料，该染料既可以被紫外光激活，也可以被质子化激活，以揭示模型光致抗蚀剂中的纳米级光酸分布。化学放大抗蚀剂是半导体行业中主要使用的光刻材料。在曝光后产生的光酸分布及其在曝光后烘烤过程中的后续演变是决定最终显影抗蚀剂图像分辨率和光刻质量的主要限制因素。我们的 PALM 数据集以亚衍射极限的精度解析了潜在图像中的酸分布。我们的整体精度目前受到残余机械漂移的限制。
