State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
J Phys Condens Matter. 2012 Nov 28;24(47):475604. doi: 10.1088/0953-8984/24/47/475604. Epub 2012 Oct 31.
We investigate the heteroepitaxial growth of Bi(2)Se(3) films on FeSe substrates by low-temperature scanning tunneling microscopy/spectroscopy. The growth of Bi(2)Se(3) on FeSe proceeds via van der Waals epitaxy with atomically flat morphology. A striped moiré pattern originating from the lattice mismatch between Bi(2)Se(3) and FeSe is observed. Tunneling spectra reveal the spatially inhomogeneous electronic structure of the Bi(2)Se(3) thin films, which can be ascribed to the charge transfer at the interface.
我们通过低温扫描隧道显微镜/光谱法研究了 Bi(2)Se(3) 薄膜在 FeSe 衬底上的异质外延生长。Bi(2)Se(3) 在 FeSe 上的生长通过范德华外延进行，具有原子级平坦的形态。观察到源自 Bi(2)Se(3) 和 FeSe 之间晶格失配的条纹莫尔图案。隧道谱揭示了 Bi(2)Se(3) 薄膜的空间非均匀电子结构，这可以归因于界面处的电荷转移。
