Salvato Matteo, Crescenzi Maurizio De, Scagliotti Mattia, Castrucci Paola, Boninelli Simona, Caruso Giuseppe Mario, Liu Yi, Mikkelsen Anders, Timm Rainer, Nahas Suhas, Black-Schaffer Annica, Kunakova Gunta, Andzane Jana, Erts Donats, Bauch Thilo, Lombardi Floriana
Dipartimento di Fisica and INFN, Università di Roma "Tor Vergata", 00133 Roma, Italy.
CNR-IMM, Strada VIII 5, 95121 Catania, Italy.
ACS Nano. 2022 Sep 27;16(9):13860-13868. doi: 10.1021/acsnano.2c02515. Epub 2022 Sep 13.
Mismatch between adjacent atomic layers in low-dimensional materials, generating moiré patterns, has recently emerged as a suitable method to tune electronic properties by inducing strong electron correlations and generating novel phenomena. Beyond graphene, van der Waals structures such as three-dimensional (3D) topological insulators (TIs) appear as ideal candidates for the study of these phenomena due to the weak coupling between layers. Here we discover and investigate the origin of 1D moiré stripes on the surface of BiSe TI thin films and nanobelts. Scanning tunneling microscopy and high-resolution transmission electron microscopy reveal a unidirectional strained top layer, in the range 14-25%, with respect to the relaxed bulk structure, which cannot be ascribed to the mismatch with the substrate lattice but rather to strain induced by a specific growth mechanism. The 1D stripes are characterized by a spatial modulation of the local density of states, which is strongly enhanced compared to the bulk system. Density functional theory calculations confirm the experimental findings, showing that the TI surface Dirac cone is preserved in the 1D moiré stripes, as expected from the topology, though with a heavily renormalized Fermi velocity that also changes between the top and valley of the stripes. The strongly enhanced density of surface states in the TI 1D moiré superstructure can be instrumental in promoting strong correlations in the topological surface states, which can be responsible for surface magnetism and topological superconductivity.
低维材料中相邻原子层之间的失配会产生莫尔条纹,最近这已成为一种通过诱导强电子关联和产生新现象来调节电子性质的合适方法。除了石墨烯之外,诸如三维(3D)拓扑绝缘体(TI)之类的范德华结构由于层间耦合较弱,似乎是研究这些现象的理想候选材料。在这里,我们发现并研究了BiSe TI薄膜和纳米带表面上一维莫尔条纹的起源。扫描隧道显微镜和高分辨率透射电子显微镜揭示,相对于松弛的体结构,顶层存在14% - 25%范围内的单向应变,这不能归因于与衬底晶格的失配,而是由特定生长机制引起的应变。这些一维条纹的特征是态密度的空间调制,与体系统相比,其显著增强。密度泛函理论计算证实了实验结果,表明TI表面狄拉克锥在一维莫尔条纹中得以保留,正如拓扑结构所预期的那样,尽管费米速度经过大幅重整化,并且在条纹的顶部和谷底之间也会发生变化。TI一维莫尔超结构中表面态密度的显著增强可能有助于促进拓扑表面态中的强关联,这可能导致表面磁性和拓扑超导性。