Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China.
Dalton Trans. 2013 Jan 14;42(2):585-90. doi: 10.1039/c2dt31996a. Epub 2012 Nov 23.
The applications of ferroelectric thin films such as the sensitivity of nonvolatile ferroelectric random access memories are closely linked with large remnant polarization. The high-T(C) (1-x)Bi(Zn(1/2)Zr(1/2))O(3)-xPbTiO(3) (x = 0.7-0.9) thin films with high (100) orientation were fabricated on Pt(111)/Ti/SiO(2)/Si substrates via a sol-gel method. The thin films could be crystallized well in a phase-pure perovskite structure. The electrical properties of the sol-gel-derived BZZ-PT thin films were investigated. A large remanent polarization with 2P(r) up to 110 μC cm(-2) and a small leakage current of 3.8 × 10(-7) A cm(-2) under an electric field of 150 kV cm(-1) are observed on the 0.2BZZ-0.8PT thin films. Furthermore, a relatively stable polarization fatigue property was achieved, indicating a potential application in high-temperature ferroelectric devices.
铁电薄膜的应用，如非易失性铁电随机存取存储器的灵敏度，与大剩余极化密切相关。高（100）取向的高 T（C）（1-x）Bi（Zn（1/2）Zr（1/2））O（3）-xPbTiO（3）（x = 0.7-0.9）薄膜通过溶胶-凝胶法在 Pt（111）/Ti/SiO（2）/Si 衬底上制备。薄膜可以在纯钙钛矿结构中很好地结晶。研究了溶胶-凝胶衍生的 BZZ-PT 薄膜的电学性能。在 150 kV cm（-1）电场下，0.2BZZ-0.8PT 薄膜的剩余极化值高达 2P（r）为 110 μC cm（-2），漏电流为 3.8 × 10（-7）A cm（-2）。此外，还实现了相对稳定的极化疲劳性能，表明其在高温铁电器件中有潜在的应用。
