在硅衬底上生长的[001]取向的掺镨铅镁铌酸铅-钛酸铅铁电纳米薄膜的合成、巨介电和热释电响应

Synthesis, Giant Dielectric, and Pyroelectric Response of [001]-Oriented Pr Doped Pb(MgNb)O₃-PbTiO₃ Ferroelectric Nano-Films Grown on Si Substrates.

作者信息

Cai Changlong, Zhang Deqiang, Liu Weiguo, Wang Jun, Zhou Shun, Su Yongming, Sun Xueping, Lin Dabin

机构信息

Thin Film and Optical Manufacturing Technology, Key Laboratory of Ministry of Education, Xi'an Technological University, Xi'an 710032, China.

Department of Basic Science, Air Force Engineering University, Xi'an 710051, China.

出版信息

Materials (Basel). 2018 Nov 28;11(12):2392. doi: 10.3390/ma11122392.

DOI:10.3390/ma11122392

PMID:30486499

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6316953/

Abstract

The [001]-oriented Pr doped Pb(MgNb)O₃-0.30PbTiO₃ (Pr-PMN-PT) thin films with a composition near the morphotropic phase boundary (MPB) were synthesized by a sol⁻gel method. The crystal structure was characterized using X-ray diffraction. It was found that a single perovskite phase was achieved in Pr-PMN-PT thin films annealed at 650 °C for 3 min. The dielectric constant () value was 2400 in 2.5% Pr-PMN-PT thin films at room temperature, 110% higher than that of pure PMN-PT samples. Through 2.5% Pr doping, remanent polarization () and coercive field () values increased from 11.5 μC/cm² and 35 kV/cm to 17.3 μC/cm² and 63.5 kV/cm, respectively, in PMN-PT thin films. The leakage current densities of pure and 2.5% Pr-PMN-PT thin films were on the order of 1.24 × 10 A/cm² and 5.8 × 10 A/cm², respectively, at 100 kV/cm. A high pyroelectric coefficient () with a value of 167 μC/m²K was obtained in 2.5% Pr-PMN-PT thin films on Si substrate, which makes this material suitable for application in infrared detectors.

摘要

采用溶胶-凝胶法合成了取向为[001]的Pr掺杂Pb(Mg₁/₃Nb₂/₃)O₃-0.30PbTiO₃（Pr-PMN-PT）薄膜，其成分接近准同型相界（MPB）。利用X射线衍射对晶体结构进行了表征。发现在650℃退火3分钟的Pr-PMN-PT薄膜中获得了单一的钙钛矿相。室温下，2.5% Pr-PMN-PT薄膜的介电常数（）值为2400，比纯PMN-PT样品高110%。通过2.5% Pr掺杂，PMN-PT薄膜的剩余极化强度（）和矫顽场（）值分别从11.5 μC/cm²和35 kV/cm增加到17.3 μC/cm²和63.5 kV/cm。在100 kV/cm下，纯PMN-PT薄膜和2.5% Pr-PMN-PT薄膜的漏电流密度分别约为1.24×10⁻⁶ A/cm²和5.8×10⁻⁷ A/cm²。在硅衬底上的2.5% Pr-PMN-PT薄膜中获得了高达167 μC/m²K的热释电系数（），这使得该材料适用于红外探测器应用。