基于 ZnO/Mg(x)Zn(1-x)O 多量子阱的随机激光二极管的结构和光学特性。

Structural and optical characterization of ZnO/Mg(x)Zn(1-x)O multiple quantum wells based random laser diodes.

机构信息

School of Physics and Technology, Center for Electron Microscopy and MOE Key Laboratory of Artificial Micro- and Nano-structures, Wuhan University, Wuhan 430072, People's Republic of China.

出版信息

ACS Appl Mater Interfaces. 2012 Dec;4(12):7043-6. doi: 10.1021/am302378v. Epub 2012 Dec 7.

DOI:10.1021/am302378v

PMID:23186116

Abstract

Two kinds of laser diodes (LDs) comprised of ZnO/Mg(x)Zn(1-x)O (ZnO/MZO) multiple quantum wells (MQWs) grown on GaN (MQWs/GaN) and Si (MQWs/Si) substrates, respectively, have been constructed. The LD with MQWs/GaN exhibits ultraviolet random lasing under electrical excitation, while that with MQWs/Si does not. In the MQWs/Si, ZnO/MZO MQWs consist of nanoscaled crystallites, and the MZO layers undergo a phase separation of cubic MgO and hexagonal ZnO. Moreover, the Mg atom predominantly locates in the MZO layers along with a significant aggregation at the ZnO/MZO interfaces; in sharp contrast, the ZnO/MZO MQWs in the MQWs/GaN show a well-crystallized structure with epitaxial relationships among GaN, MZO, and ZnO. Notably, Mg is observed to diffuse into the ZnO well layers. The structure-optical property relationship of these two LDs is further discussed.

摘要

两种激光二极管（LD）已构建完成，分别由在 GaN（MQWs/GaN）和 Si（MQWs/Si）衬底上生长的 ZnO/Mg(x)Zn(1-x)O（ZnO/MZO）多量子阱（MQWs）组成。在电激发下，具有 MQWs/GaN 的 LD 表现出紫外随机激光，而具有 MQWs/Si 的 LD 则没有。在 MQWs/Si 中，ZnO/MZO MQWs 由纳米晶组成，并且 MZO 层经历立方 MgO 和六方 ZnO 的相分离。此外，Mg 原子主要位于 MZO 层中，并且在 ZnO/MZO 界面处发生明显聚集；与此形成鲜明对比的是，MQWs/GaN 中的 ZnO/MZO MQWs 具有良好的结晶结构，并且 GaN、MZO 和 ZnO 之间存在外延关系。值得注意的是，Mg 被观察到扩散到 ZnO 阱层中。进一步讨论了这两种 LD 的结构-光学性质关系。