Department of Emerging Materials Science, DGIST, Daegu 42988, South Korea.
Nanoscale. 2018 Aug 9;10(31):14812-14818. doi: 10.1039/c8nr03711f.
Since semiconducting ZnO has attractive properties such as wide bandgap and large exciton binding energy, it has motivated us to realize efficient ultraviolet (UV) light-emitting diodes (LEDs). Furthermore, facile growth of ZnO nanostructures has triggered numerous research studies to examine them as nanoscale building blocks for optoelectronic devices. Here, we demonstrate the growth of ZnO-based core-shell p-n homojunction nanorod arrays with radial MgZnO/ZnO multiple quantum wells (MQWs) and report the characteristics of a core-shell ZnO nanorod LED. The shell layers of MgZnO/ZnO MQWs and p-type antimony-doped MgZnO were epitaxially grown on the surface of ZnO core nanorod arrays. By introducing the radial MQWs, the photoluminescence intensity was greatly increased by 4 times, compared to that of the bare ZnO nanorod array, suggesting that the core-shell MQWs can be used to realize the nanoscale ZnO LEDs with high internal quantum efficiency. As the injection current increased, the EL intensity of UV emission at 375 nm from the MgZnO/ZnO MQWs strongly increased without shifting of the emission peak because of the non-polar nature of MQWs grown on the side walls of the ZnO nanorods. These results highlight the potential of an integrated nanoscale UV light emitter in various photonic devices.
由于半导体 ZnO 具有宽带隙和大激子束缚能等吸引人的特性,因此激发了我们实现高效紫外(UV)发光二极管(LED)的研究。此外,ZnO 纳米结构的易于生长引发了大量研究,以考察它们作为光电设备纳米级构建块的性能。在此,我们展示了基于 ZnO 的核壳 p-n 同质结纳米棒阵列的生长,该阵列具有径向 MgZnO/ZnO 多量子阱(MQWs),并报告了核壳 ZnO 纳米棒 LED 的特性。MgZnO/ZnO MQWs 和 p 型掺 Sb 的 MgZnO 壳层在 ZnO 核纳米棒阵列的表面外延生长。通过引入径向 MQWs,与裸 ZnO 纳米棒阵列相比,光致发光强度大大增加了 4 倍,这表明核壳 MQWs 可用于实现具有高内量子效率的纳米级 ZnO LEDs。随着注入电流的增加,来自 MgZnO/ZnO MQWs 的 375nm 处的 UV 发射的 EL 强度强烈增加,而发射峰没有偏移,这是因为 MQWs 具有非极性,生长在 ZnO 纳米棒的侧壁上。这些结果突出了集成纳米级 UV 发射器在各种光子器件中的潜力。