通过p型MgZnO电子阻挡层增强MgZnO/ZnO多量子阱发光二极管的紫外发射

Enhanced ultraviolet emission of MgZnO/ZnO multiple quantum wells light-emitting diode by p-type MgZnO electron blocking layer.

作者信息

Choi Yong-Seok, Kang Jang-Won, Kim Byeong-Hyeok, Park Seong-Ju

出版信息

Opt Express. 2013 Dec 16;21(25):31560-6. doi: 10.1364/OE.21.031560.

DOI:10.1364/OE.21.031560

Abstract

We report on the effect of a p-type MgZnO electron blocking layer (EBL) on the optical and electrical properties of MgZnO/ZnO multiple quantum wells (MQWs) light-emitting diodes (LEDs). The p-type Mg(0.15)Zn(0.85)O EBL was introduced between the MQWs and p-type Mg(0.1)Zn(0.9)O layers. The p-type Mg(0.15)Zn(0.85)O EBL increased the ultraviolet emission by 111.2% at 60 mA and decreased the broad deep-level emission from ZnO LEDs. The calculated band structures and carrier distribution in ZnO LEDs show that p-type Mg(0.15)Zn(0.85)O EBL effectively suppresses the electron overflow from MQWs to p-type Mg(0.1)Zn(0.9)O and increases the hole concentration in the MQWs.

摘要

我们报道了p型MgZnO电子阻挡层（EBL）对MgZnO/ZnO多量子阱（MQW）发光二极管（LED）的光学和电学性质的影响。在多量子阱和p型Mg(0.1)Zn(0.9)O层之间引入了p型Mg(0.15)Zn(0.85)O电子阻挡层。p型Mg(0.15)Zn(0.85)O电子阻挡层在60 mA时使紫外发射增加了111.2%，并减少了ZnO发光二极管的宽深能级发射。对ZnO发光二极管中计算得到的能带结构和载流子分布表明，p型Mg(0.15)Zn(0.85)O电子阻挡层有效地抑制了电子从多量子阱向p型Mg(0.1)Zn(0.9)O的溢出，并增加了多量子阱中的空穴浓度。