RIES, Hokkaido University, Kita-21, Nishi-10, Sapporo, 001-0021, Japan.
Nanoscale Res Lett. 2012 Nov 27;7(1):654. doi: 10.1186/1556-276X-7-654.
Blueshifts of luminescence observed in type-II heterostructures are quantitatively examined in terms of a self-consistent approach including excitonic effects. This analysis shows that the main contribution to the blueshift originates from the well region rather than the variation of triangular potentials formed in the barrier region. The power law for the blueshift, ΔEPL ∝ Plaserm, from m = 1/2 for lower excitation Plaser to m = 1/4 for higher excitation, is obtained from the calculated results combined with a rate equation analysis, which also covers the previously believed m = 1/3 power law within a limited excitation range. The present power law is consistent with the blueshift observed in a GaAsSb/GaAs quantum well.
在考虑激子效应的自洽方法中，定量研究了 II 型异质结构中观察到的荧光蓝移。该分析表明，蓝移的主要贡献来自势阱区而不是势垒区形成的三角势的变化。从较低激发 Plaser 的 m = 1/2 到较高激发的 m = 1/4 的计算结果与速率方程分析相结合，得到了蓝移的幂律，ΔEPL∝Plaserm，这也涵盖了先前认为在有限激发范围内的 m = 1/3 幂律。目前的幂律与在 GaAsSb/GaAs 量子阱中观察到的蓝移一致。
