Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands.
Nano Lett. 2010 Apr 14;10(4):1198-201. doi: 10.1021/nl903534n.
In semiconducting nanowires, both zinc blende and wurtzite crystal structures can coexist. The band structure difference between the two structures can lead to charge confinement. Here we fabricate and study single quantum dot devices defined solely by crystal phase in a chemically homogeneous nanowire and observe single photon generation. More generally, our results show that this type of carrier confinement represents a novel degree of freedom in device design at the nanoscale.
在半导体纳米线中，闪锌矿和纤锌矿两种晶体结构可以共存。这两种结构的能带结构差异会导致电荷限制。在这里，我们在化学均匀的纳米线中制造和研究了仅由晶体相定义的单个量子点器件，并观察到了单光子的产生。更一般地说，我们的结果表明，这种类型的载流子限制代表了纳米尺度器件设计中的一种新的自由度。
