Yeh Chi-Li, Hsu Hung-Ru, Chen Sheng-Hui, Liu Yung-Sheng
Department of Optics and Photonics, National Central University, Chung-Li, Taiwan.
Opt Express. 2012 Nov 5;20 Suppl 6:A806-11. doi: 10.1364/OE.20.00A806.
We investigated the near infrared enhancement in Cu(In,Ga)Se(2) (CIGS)- based solar cells utilizing a hydrogen-doping ZnO (ZnO:H) window layer. The results show that the carrier concentration of ZnO:H film is lower than that of AZO film which can increase the transmittance in the NIR. The advantage of ZnO:H film is higher Hall mobility than AZO film. Thus ZnO:H film has similar resistivity to AZO film. It was found that the cell efficiency was 12.4 and 13% for the AZO device and the ZnO:H device, respectively. The cell efficiency is enhanced by 4.8%. Furthermore, the results indicate that, the ZnO:H film is superior to the AZO film as the window layer for CIGS-based solar cells.
我们研究了利用氢掺杂氧化锌（ZnO:H）窗口层的基于Cu(In,Ga)Se(2)（CIGS）的太阳能电池中的近红外增强效应。结果表明，ZnO:H薄膜的载流子浓度低于可提高近红外透射率的AZO薄膜。ZnO:H薄膜的优势在于其霍尔迁移率高于AZO薄膜。因此，ZnO:H薄膜具有与AZO薄膜相似的电阻率。结果发现，AZO器件和ZnO:H器件的电池效率分别为12.4%和13%。电池效率提高了4.8%。此外，结果表明，ZnO:H薄膜作为基于CIGS的太阳能电池的窗口层优于AZO薄膜。
