Department of Chemical & Biological Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul 136-713, South Korea.
Langmuir. 2013 Jan 8;29(1):380-6. doi: 10.1021/la303857b. Epub 2012 Dec 13.
We report on the resistive switching nonvolatile memory (RSNM) properties of niobium pentoxide (Nb(2)O(5)) films prepared using sol-gel chemistry. A sol-gel derived solution of niobium ethoxide, a precursor to Nb(2)O(5), was spin-coated on to a platinum (Pt)-coated silicon substrate, and was then annealed at approximately 620 and 450 °C to form a Nb(2)O(5) film of polycrystalline and amorphous structure, respectively. A top electrode consisting of Ag, W, Au, or Pt was then coated onto the Nb(2)O(5) films to complete the fabrication. After a forming process of limited current compliance up to 10 mA, known as "electroforming", a resistive switching phenomenon, independent of voltage polarity (unipolar switching), was observed at low operating voltages (0.59 ± 0.05 V(RESET) and 1.03 ± 0.06 V(SET)) with a high ON/OFF current ratio above 10(8). The reported approach offers opportunities for preparing Nb(2)O(5)-based resistive switching memory devices from solution process.
我们报告了使用溶胶-凝胶化学制备的五氧化二铌（Nb 2 O 5 ）薄膜的电阻开关非易失性存储器（RSNM）特性。铌乙氧基烷的溶胶-凝胶衍生溶液是五氧化二铌的前体，旋涂在铂（Pt）涂覆的硅衬底上，然后分别在约 620 和 450°C 下退火，形成多晶和非晶结构的 Nb 2 O 5 薄膜。然后将由 Ag、W、Au 或 Pt 组成的顶电极涂覆到 Nb 2 O 5 薄膜上以完成制造。在经过电流限制为 10 mA 的有限形成过程（称为“电形成”）之后，观察到在低操作电压（0.59±0.05 V（RESET）和 1.03±0.06 V（SET））下的电阻开关现象，与高于 10 8 的高 ON/OFF 电流比独立于电压极性（单极开关）。所报道的方法为通过溶液处理制备基于 Nb 2 O 5 的电阻开关存储器件提供了机会。
