Institute of Solid State Electronics, TU-Wien, Floragasse 7, A-1040 Vienna, Austria.
Nano Lett. 2013 Jan 9;13(1):21-5. doi: 10.1021/nl303152b. Epub 2012 Dec 17.
Controlling the morphology, electronic properties, and growth direction of nanowires (NWs) is an important aspect regarding their integration into devices on technologically relevant scales. Using the vapor-solid-solid (VSS) approach, with Ni as a catalyst and octachlorotrisilane (Si(3)Cl(8), OCTS) as a precursor, we achieved epitaxial growth of rectangular-shaped Si-NWs, which may have important implications for electronic mobility and light scattering in NW devices. The process parameters were adjusted to form cubic α-NiSi(2) particles which further act as the shaping element leading to prismatic Si-NWs. Along with the uncommon shape, also different crystallographic growth directions, namely, [100] and [110], were observed on the very same sample. The growth orientations were determined by analysis of the NWs' azimuths on the Si (111) substrates as well as by detailed transmission electron microscopy (TEM) and selected area electron diffraction (SAED) investigations.
控制纳米线（NWs）的形态、电子特性和生长方向是将其集成到技术相关规模的器件中的一个重要方面。我们使用 Ni 作为催化剂和八氯三硅烷（Si(3)Cl(8), OCTS）作为前驱体，通过汽-固-固（VSS）方法实现了矩形 Si-NWs 的外延生长，这对于 NW 器件中的电子迁移率和光散射可能具有重要意义。调整工艺参数以形成立方α-NiSi(2)颗粒，进一步作为形状元件导致形成棱柱形 Si-NWs。除了不常见的形状外，在同一样品上还观察到不同的晶体生长方向，即[100]和[110]。通过分析 NWs 在 Si(111)衬底上的方位以及通过详细的透射电子显微镜（TEM）和选区电子衍射（SAED）研究确定了生长方向。
