Department of Physics, National Cheng Kung University, Tainan 701, Taiwan.
Phys Rev Lett. 2012 Oct 26;109(17):177202. doi: 10.1103/PhysRevLett.109.177202. Epub 2012 Oct 23.
All-electrical control of spin transport in nanostructures has been the central interest and challenge of spin physics and spintronics. Here we demonstrate on-chip spin polarizing or filtering actions by driving the gate-defined one dimensional (1D) conductor, one of the simplest geometries for integrated quantum devices, away from the conventional Ohmic regime. Direct measurement of the spin polarization of the emitted current was performed when the momentum degeneracy was lifted, wherein both the 1D polarizer for spin injection and the analyzer for spin detection were demonstrated. The results showed that a configuration of gates and applied voltages can give rise to a tunable spin polarization, which has implications for the development of spintronic devices and future quantum information processing.
全电控制自旋输运在纳米结构中一直是自旋物理和自旋电子学的核心关注点和挑战。在这里，我们通过驱动栅定义的一维（1D）导体，展示了在远离传统欧姆区域的情况下，对自旋极化或滤波的作用，这是集成量子器件最简单的几何形状之一。当动量简并被解除时，对发射电流的自旋极化进行了直接测量，其中自旋注入的 1D 极化器和自旋检测的分析器都得到了证明。结果表明，栅极和外加电压的配置可以产生可调谐的自旋极化，这对自旋电子器件的发展和未来的量子信息处理具有重要意义。
