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具有更高陈数的拓扑平带中的分数陈绝缘体。

Fractional Chern insulators in topological flat bands with higher Chern number.

机构信息

Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China and Beijing Computational Science Research Center, Beijing 100084, China.

出版信息

Phys Rev Lett. 2012 Nov 2;109(18):186805. doi: 10.1103/PhysRevLett.109.186805.

Abstract

Lattice models forming bands with higher Chern number offer an intriguing possibility for new phases of matter with no analogue in continuum Landau levels. Here, we establish the existence of a number of new bulk insulating states at fractional filling in flat bands with a Chern number C = N > 1, forming in a recently proposed pyrochlore model with strong spin-orbit coupling. In particular, we find compelling evidence for a series of stable states at ν = 1/(2N + 1) for fermions as well as bosonic states at ν = 1/(N + 1). By examining the topological ground state degeneracies and the excitation structure as well as the entanglement spectrum, we conclude that these states are Abelian. We also explicitly demonstrate that these states are nevertheless qualitatively different from conventional quantum Hall (multilayer) states due to the novel properties of the underlying band structure.

摘要

格点模型形成具有更高陈数的能带,为没有连续朗道能级类似物的物质的新相提供了一个有趣的可能性。在这里,我们在具有陈数 C=N>1 的平面带中建立了在分数填充下的一些新的体绝缘态的存在,这些态形成于具有强自旋轨道耦合的最近提出的钙钛矿模型中。特别是,我们发现了在ν=1/(2N+1)时费米子以及ν=1/(N+1)时玻色子的一系列稳定态的令人信服的证据。通过研究拓扑基态简并度和激发结构以及纠缠谱,我们得出这些态是阿贝尔的。我们还明确地表明,由于基础能带结构的新特性,这些态与传统的量子霍尔(多层)态在性质上有很大的不同。

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