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范德瓦尔斯异质结构中分数陈绝缘体的观测。

Observation of fractional Chern insulators in a van der Waals heterostructure.

机构信息

California Nanosystems Institute, University of California, Santa Barbara, CA 93106, USA.

Department of Physics, University of California, Santa Barbara, CA 93106, USA.

出版信息

Science. 2018 Apr 6;360(6384):62-66. doi: 10.1126/science.aan8458. Epub 2018 Mar 1.

Abstract

Topologically ordered phases are characterized by long-range quantum entanglement and fractional statistics rather than by symmetry breaking. First observed in a fractionally filled continuum Landau level, topological order has since been proposed to arise more generally at fractional fillings of topologically nontrivial Chern bands. Here we report the observation of gapped states at fractional fillings of Harper-Hofstadter bands arising from the interplay of a magnetic field and a superlattice potential in a bilayer graphene-hexagonal boron nitride heterostructure. We observed phases at fractional filling of bands with Chern indices [Formula: see text] Some of these phases, in [Formula: see text] and [Formula: see text] bands, are characterized by fractional Hall conductance-that is, they are known as fractional Chern insulators and constitute an example of topological order beyond Landau levels.

摘要

拓扑有序相的特征是长程量子纠缠和分数统计,而不是对称破缺。拓扑有序相最初在分数填充的连续 Landau 能级中被观测到,此后人们提出,在拓扑非平庸 Chern 能带的分数填充中更普遍地存在拓扑有序相。在这里,我们报告了在双层石墨烯-六方氮化硼异质结构中磁场和超晶格势相互作用产生的 Harper-Hofstadter 能带分数填充时的能隙态的观测结果。我们在 Chern 数为[Formula: see text]的能带分数填充处观测到了一些相。在[Formula: see text]和[Formula: see text]带中,这些相的分数霍尔电导率的特征是,它们被称为分数 Chern 绝缘体,构成了超越 Landau 能级的拓扑有序相的一个例子。

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