Department of Nanomechanics, Tohoku University, Sendai, 980-8579, Japan.
Nanoscale Res Lett. 2012 Dec 27;7(1):686. doi: 10.1186/1556-276X-7-686.
GaN nanowall network was epitaxially grown on Si (111) substrate by molecular beam epitaxy. GaN nanowalls overlap and interlace with one another, together with large numbers of holes, forming a continuous porous GaN nanowall network. The width of the GaN nanowall can be controlled, ranging from 30 to 200 nm by adjusting the N/Ga ratio. Characterization results of a transmission electron microscope and X-ray diffraction show that the GaN nanowall is well oriented along the C axis. Strong band edge emission centered at 363 nm is observed in the spectrum of room temperature photoluminescence, indicating that the GaN nanowall network is of high quality. The sheet resistance of the Si-doped GaN nanowall network along the lateral direction was 58 Ω/. The conductive porous nanowall network can be useful for integrated gas sensors due to the large surface area-to-volume ratio and electrical conductivity along the lateral direction by combining with Si micromachining.
氮化镓纳米墙网络通过分子束外延在 Si（111）衬底上外延生长。氮化镓纳米墙相互重叠和交织，同时形成大量的孔，形成连续的多孔氮化镓纳米墙网络。通过调整 N/Ga 比，可以控制氮化镓纳米墙的宽度，范围从 30 到 200nm。透射电子显微镜和 X 射线衍射的表征结果表明，氮化镓纳米墙沿着 C 轴方向取向良好。在室温光致发光光谱中观察到中心位于 363nm 的强带边发射，表明氮化镓纳米墙网络具有高质量。沿着横向方向的掺硅氮化镓纳米墙网络的薄层电阻为 58 Ω/。通过与 Si 微加工相结合，由于具有大的比表面积与体积比和沿横向方向的电导率，多孔导电纳米墙网络可用于集成气体传感器。
