Hou Wen-Chi, Wu Tung-Hsien, Tang Wei-Che, Hong Franklin Chau-Nan
Department of Chemical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, Research Center for Energy Technology and Strategy, National Cheng Kung University, 1 University Road, Tainan, 70101, Taiwan.
Nanoscale Res Lett. 2012 Jul 7;7(1):373. doi: 10.1186/1556-276X-7-373.
Aligned GaN nanowire arrays have high potentials for applications in future electronic and optoelectronic devices. In this study, the growth of GaN nanowire arrays with high degree of vertical alignment was attempted by plasma-enhanced CVD on the c-plane GaN substrate. We found that the lattice matching between the substrate and the nanowire is essential for the growth of vertically aligned GaN nanowires. In addition, the initial nucleation process is also found to play a key role in creating the high-quality homoepitaxy at the nanowire-substrate interface. By controlling the nucleation stage, the growth of highly aligned vertical GaN nanowire arrays can be achieved. The reasons for the observed effects are discussed.
取向一致的氮化镓纳米线阵列在未来电子和光电器件应用中具有很高的潜力。在本研究中，尝试通过等离子体增强化学气相沉积法在c面氮化镓衬底上生长高度垂直取向的氮化镓纳米线阵列。我们发现衬底与纳米线之间的晶格匹配对于垂直取向氮化镓纳米线的生长至关重要。此外，还发现初始成核过程在纳米线 - 衬底界面处形成高质量同质外延中起着关键作用。通过控制成核阶段，可以实现高度取向的垂直氮化镓纳米线阵列的生长。文中讨论了观察到这些效应的原因。
