Nano-Physics Research Laboratory, Department of Physics, University of Tehran, Tehran, Iran.
Nanotechnology. 2013 Feb 8;24(5):055303. doi: 10.1088/0957-4484/24/5/055303. Epub 2013 Jan 11.
We report the fabrication of a titanium oxide/carbon nanotube based field emission device suitable for nanolithography and fabrication of transistors. The growth of carbon nanotubes (CNTs) is performed on silicon substrates using a plasma-enhanced chemical vapor deposition method. The vertically grown CNTs are encapsulated by titanium oxide (TiO(2)) using an atmospheric pressure chemical vapor deposition system. Field emission from the CNTs is realized by mechanical polishing of the prepared structure. Possible applications of such nanostructures as a lithography tool with variable electron beam diameter has been investigated. The obtained results show that a spot size of less than 30 nm can be obtained by applying the proper voltage on TiO(2) surrounding gate. Electrical measurements of the fabricated device confirm the capability of the structure for fabrication of field emission based field effect transistors. By a voltage applied between the gate and the cathode electrode, the emission current from CNTs shows a significant drop, indicating proper control of the gate on the emission current.
我们报告了一种基于氧化钛/碳纳米管的场发射器件的制造，该器件适用于纳米光刻和晶体管制造。使用等离子体增强化学气相沉积方法在硅衬底上生长碳纳米管（CNT）。使用常压化学气相沉积系统，通过氧化钛（TiO 2 ）将垂直生长的 CNT 封装。通过对制备结构进行机械抛光实现 CNT 的场发射。研究了这种纳米结构作为具有可变电子束直径的光刻工具的可能应用。获得的结果表明，通过在周围栅极上施加适当的电压，可以获得小于 30nm 的光斑尺寸。对所制造器件的电测量证实了该结构用于制造场发射场效应晶体管的能力。通过在栅极和阴极电极之间施加电压，从 CNT 发出的电流显示出明显的下降，表明栅极对发射电流的适当控制。
