Park Sewan, Kim Hyeon Cheol, Yum Min Hyung, Yang Ji Hoon, Park Chong Yun, Chun Kukjin, Eom Bose
School of Electrical Engineering, Seoul National University, 599 Gwanangno, Gwanak-gu, Seoul 151-744, Republic of Korea. Inter-university Semiconductor Research Center, Seoul National University, 599 Gwanangno, Gwanak-gu, Seoul 151-742, Republic of Korea.
Nanotechnology. 2008 Nov 5;19(44):445304. doi: 10.1088/0957-4484/19/44/445304. Epub 2008 Sep 26.
We suggest a novel process for fabricating a carbon nanotube field emission source having one carbon nanotube per gate aperture. The fabrication is based on UV lithography, instead of electron beam lithography. We used only one patterning step to define the gate, insulator, and cathode. We applied a DC voltage to the anode and a pulse signal to the gate. We then investigated the I-V characteristics of the structure, changing the frequency and the duty-cycle of the pulse signal applied to the gate. We found that the optimum frequency and duty-cycle were 250 kHz and 22%, respectively. The structure had a turn-on voltage of 1.1 V under these conditions. The anode voltage did not have much effect. Finally, we checked the stability of the source for 40 h. We obtained an average emission current of 1.093 µA with a standard deviation of 1.019 × 10(-2) µA.
我们提出了一种新颖的工艺来制造一种碳纳米管场发射源，每个栅极孔径中有一根碳纳米管。该制造工艺基于紫外光刻，而非电子束光刻。我们仅使用一步光刻来定义栅极、绝缘体和阴极。我们向阳极施加直流电压，并向栅极施加脉冲信号。然后，我们通过改变施加到栅极的脉冲信号的频率和占空比，研究了该结构的I-V特性。我们发现最佳频率和占空比分别为250 kHz和22%。在这些条件下，该结构的开启电压为1.1 V。阳极电压影响不大。最后，我们检查了该源在40小时内的稳定性。我们获得的平均发射电流为1.093 µA，标准偏差为1.019×10(-2) µA。
