Department of Mechanical Engineering, University of Wisconsin-Milwaukee, Milwaukee, Wisconsin 53211, USA.
Nanoscale. 2013 Feb 21;5(4):1353-68. doi: 10.1039/c2nr32453a.
Interest in graphene has grown extensively in the last decade or so, because of its extraordinary physical properties, chemical tunability, and potential for various applications. However, graphene is intrinsically a semimetal with a zero bandgap, which considerably impedes its use in many applications where a suitable bandgap is required. The transformation of graphene into a semiconductor has attracted significant attention, because the presence of a sizable bandgap in graphene can vastly promote its already-fascinating potential in an even wider range of applications. Here we review major advances in the pursuit of semiconducting graphene materials. We first briefly discuss the electronic properties of graphene and some theoretical background for manipulating the band structure of graphene. We then summarize many experimental approaches proposed in recent years for producing semiconducting graphene. Despite the relatively short history of research in semiconducting graphene, the progress has been remarkable and many significant developments are highly anticipated.
在过去的十年左右,由于其非凡的物理性质、化学可调性以及在各种应用中的潜力,人们对石墨烯产生了浓厚的兴趣。然而,石墨烯本质上是一种具有零带隙的半金属,这极大地阻碍了其在许多需要合适带隙的应用中的使用。将石墨烯转化为半导体引起了广泛关注,因为在石墨烯中存在一个相当大的带隙,可以极大地促进其在更广泛的应用中的迷人潜力。在这里,我们综述了追求半导体石墨烯材料的主要进展。我们首先简要讨论了石墨烯的电子性质和一些用于操纵石墨烯能带结构的理论背景。然后,我们总结了近年来提出的许多用于制备半导体石墨烯的实验方法。尽管在半导体石墨烯的研究历史相对较短,但已经取得了显著的进展,许多重大进展备受期待。