Department of Chemistry, University of Antwerp, Campus Drie Eiken, Universiteitsplein 1, 2610 Wilrijk, Belgium.
Anal Bioanal Chem. 2013 Feb;405(6):2053-64. doi: 10.1007/s00216-012-6647-6. Epub 2013 Jan 16.
Molecular depth profiling is needed to develop high-tech materials optimised to the μm or even up to the nm scale. Recent progress in time-of-flight static secondary ion mass spectrometry (ToF-S-SIMS) offers perspectives to molecular depth profiling. However, at this moment, the methodology is not yet capable to deal with a range of materials science applications because of the limited depth range, the loss of intensity in the subsurface and the loss of depth resolution at large distances from the original surface. Therefore, the purpose of this paper is to develop a complementary approach for the molecular 3D analysis at large depth, using a combination of ultra-low angle microtomy (ULAM) and surface analysis of the sectioned material with ToF-S-SIMS. Single inkjet dots with a diameter of 100 μm and height of 22 μm on a PET substrate have been used as a test system for the methodology. It is demonstrated that the use of a diamond knife allows the molecular composition and distribution of components within the microscopic feature to be probed with a lateral resolution of 300 nm. Hence the methodology approaches the physical limit for ion imaging of organic components with local concentrations in the % range. In practice, the achievable depth resolution with ULAM-S-SIMS is ultimately limited by the surface roughness of the section. Careful optimisation of the ULAM step has resulted in a surface roughness within 6 nm (R(a) value) at a depth of 21 μm. This offers perspective to achieve 3D analysis with a depth resolution as good as 18 nm at such a large distance from the surface. Furthermore, the ULAM-S-SIMS approach is applicable to materials unamenable to ion beam erosion. However, the method is limited to dealing with, for instance, Si or glass substrates that cannot be sectioned with a microtomy knife. Furthermore, sufficient adhesion between stacked layers or between the coating and substrate is required. However, it is found that the approach is applicable to a wide variety of industrially important (multi)layers of polymers on a polymer substrate.
为了开发优化至微米甚至纳米级的高科技材料,需要进行分子深度剖析。飞行时间静态二次离子质谱(ToF-S-SIMS)的最新进展为分子深度剖析提供了新的视角。然而,目前该方法由于深度范围有限、次表面强度损失以及离原始表面较大距离处深度分辨率损失等问题,还不能满足各种材料科学应用的需求。因此,本文的目的是开发一种互补的方法,用于使用超角微切割(ULAM)和对切割材料进行 ToF-S-SIMS 表面分析,在大深度范围内进行分子 3D 分析。我们使用直径为 100 µm、高度为 22 µm 的 PET 基底上的单个喷墨点作为方法的测试系统。结果表明,使用金刚石刀可以以 300nm 的横向分辨率探测微观特征内的分子组成和成分分布。因此,该方法接近了用局部浓度在 %范围内的有机成分进行离子成像的物理极限。实际上,ULAM-S-SIMS 的可实现深度分辨率最终受到切片表面粗糙度的限制。对 ULAM 步骤的仔细优化可在 21 µm 深度处获得 6nm(R(a) 值)的表面粗糙度。这为在如此大的距离处实现深度分辨率为 18nm 的 3D 分析提供了前景。此外,ULAM-S-SIMS 方法适用于不适合离子束侵蚀的材料。然而,该方法仅限于处理例如 Si 或玻璃等不能用微切割刀切割的基底。此外,需要堆叠层之间或涂层与基底之间有足够的附着力。然而,研究发现该方法适用于各种工业上重要的聚合物基底上的聚合物(多层)涂层。