Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, USA.
Nano Lett. 2013 Feb 13;13(2):632-6. doi: 10.1021/nl304212u. Epub 2013 Jan 22.
A topological insulator is a new phase of quantum matter with a bulk band gap and spin-polarized surface states, which might find use in applications ranging from electronics to energy conversion. Despite much exciting progress in the field, high-yield solution synthesis has not been widely used for the study of topological insulator behavior. Here, we demonstrate that solvothermally synthesized Bi(2)Se(3) nanoplates are attractive for topological insulator studies. The carrier concentration of these Bi(2)Se(3) nanoplates is controlled by compensational Sb doping during the synthesis. In low-carrier-density, Sb-doped Bi(2)Se(3) nanoplates, we observe pronounced ambipolar field effect that demonstrates the flexible manipulation of carrier type and concentration for these nanostructures. Solvothermal synthesis offers an affordable, facile approach to produce high-quality nanomaterials to explore the properties of topological insulators.
拓扑绝缘体是一种具有体带隙和自旋极化表面态的新型量子物质相，可能在从电子学到能量转换等应用中得到应用。尽管该领域取得了令人兴奋的进展，但高产率的溶液合成方法尚未广泛应用于拓扑绝缘体行为的研究。在这里，我们证明了溶剂热合成的 Bi(2)Se(3)纳米板在拓扑绝缘体研究中具有吸引力。在合成过程中通过 Sb 掺杂实现载流子浓度的补偿控制。在低载流子密度、Sb 掺杂的 Bi(2)Se(3)纳米板中，我们观察到明显的双极场效应，证明了这些纳米结构的载流子类型和浓度的灵活控制。溶剂热合成提供了一种经济实惠、简便的方法来制备高质量的纳米材料，以探索拓扑绝缘体的性质。
