Wang Dan, Hu Cui-E, Liu Li-Gang, Zhang Min, Chen Xiang-Rong
Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China.
College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400047, China.
Materials (Basel). 2022 May 28;15(11):3864. doi: 10.3390/ma15113864.
In this work, we obtained an effective way to introduce magnetism into topological insulators, and successfully fabricated single crystal C-BiSe. The structural, electrical and magnetic properties of non-magnetic element X (B, C and N) doped at Bi, Se1, Se2 and VDW gap sites of BiSe were studied by the first principles. It is shown that the impurity bands formed inside the bulk inverted energy gap near the Fermi level with C doping BiSe. Due to spin-polarized ferromagnetic coupling, the time inversion symmetry of BiSe is destroyed. Remarkably, C is the most effective dopant because of the magnetic moment produced by doping at all positions. The experiment confirmed that the remnant ferromagnetism Mr is related to the C concentration. Theoretical calculations and experiments confirmed that carbon-doped BiSe is ferromagnetic, which provides a plan for manipulating topological properties and exploring spintronic applications.
在这项工作中，我们获得了一种将磁性引入拓扑绝缘体的有效方法，并成功制备了单晶C-BiSe。通过第一性原理研究了非磁性元素X（B、C和N）掺杂在BiSe的Bi、Se1、Se2和范德华间隙位置时的结构、电学和磁学性质。结果表明，C掺杂BiSe时，在费米能级附近的体反转能隙内形成了杂质带。由于自旋极化铁磁耦合，BiSe的时间反演对称性被破坏。值得注意的是，C是最有效的掺杂剂，因为在所有位置掺杂都会产生磁矩。实验证实，剩余铁磁性Mr与C浓度有关。理论计算和实验证实，碳掺杂BiSe是铁磁性的，这为操纵拓扑性质和探索自旋电子学应用提供了一个方案。
