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通过细胞膜通道密度调节 Kv2.1 K(+) 电导。

Regulation of Kv2.1 K(+) conductance by cell surface channel density.

机构信息

Department of Biomedical Sciences, Colorado State University, Fort Collins, Colorado 80523, USA.

出版信息

J Neurosci. 2013 Jan 16;33(3):1259-70. doi: 10.1523/JNEUROSCI.3008-12.2013.

Abstract

The Kv2.1 voltage-gated K(+) channel is found both freely diffusing over the plasma membrane and concentrated in micron-sized clusters localized to the soma, proximal dendrites, and axon initial segment of hippocampal neurons. In transfected HEK cells, Kv2.1 channels within cluster microdomains are nonconducting. Using total internal reflection fluorescence microscopy, the number of GFP-tagged Kv2.1 channels on the HEK cell surface was compared with K(+) channel conductance measured by whole-cell voltage clamp of the same cell. This approach indicated that, as channel density increases, nonclustered channels cease conducting. At the highest density observed, only 4% of all channels were conducting. Mutant Kv2.1 channels that fail to cluster also possessed the nonconducting state with 17% conducting K(+) at higher surface densities. The nonconducting state was specific to Kv2.1 as Kv1.4 was always conducting regardless of the cell-surface expression level. Anti-Kv2.1 immunofluorescence intensity, standardized to Kv2.1 surface density in transfected HEK cells, was used to determine the expression levels of endogenous Kv2.1 in cultured rat hippocampal neurons. Endogenous Kv2.1 levels were compared with the number of conducting channels determined by whole-cell voltage clamp. Only 13 and 27% of the endogenous Kv2.1 was conducting in neurons cultured for 14 and 20 d, respectively. Together, these data indicate that the nonconducting state depends primarily on surface density as opposed to cluster location and that this nonconducting state also exists for native Kv2.1 found in cultured hippocampal neurons. This excess of Kv2.1 protein relative to K(+) conductance further supports a nonconducting role for Kv2.1 in excitable tissues.

摘要

Kv2.1 电压门控 K(+)通道既可以自由扩散到质膜上,也可以集中在微米大小的簇中,定位于海马神经元的体、近端树突和轴突起始段。在转染的 HEK 细胞中,簇微域内的 Kv2.1 通道不导电。使用全内反射荧光显微镜,比较了 GFP 标记的 Kv2.1 通道在 HEK 细胞表面的数量与同一细胞全细胞膜电压钳测量的 K(+)通道电导。这种方法表明,随着通道密度的增加,非聚集通道停止传导。在观察到的最高密度下,只有 4%的通道是导通的。不能聚集的突变 Kv2.1 通道也具有非导通状态,在较高的表面密度下,有 17%的 K(+)导通。非导通状态是 Kv2.1 特有的,因为 Kv1.4 无论细胞表面表达水平如何,总是导通的。用 Kv2.1 在转染的 HEK 细胞中的表面密度来标准化 Kv2.1 的抗免疫荧光强度,以确定培养的大鼠海马神经元中内源性 Kv2.1 的表达水平。将内源性 Kv2.1 水平与全细胞膜电压钳测定的导通通道数进行比较。培养 14 天和 20 天的神经元中,内源性 Kv2.1 的导通率分别为 13%和 27%。这些数据表明,非导通状态主要取决于表面密度,而不是簇的位置,并且这种非导通状态也存在于培养的海马神经元中的天然 Kv2.1 中。与 K(+)电导相比,Kv2.1 蛋白的这种过剩进一步支持 Kv2.1 在可兴奋组织中发挥非传导作用。

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