Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
J Phys Condens Matter. 2013 Feb 20;25(7):075801. doi: 10.1088/0953-8984/25/7/075801. Epub 2013 Jan 17.
We investigate the electron collimation behavior in HgTe quantum wells (QWs) with a magnetic-electric barrier induced by a ferromagnetic metal stripe. We find that electrons can transmit perfectly through the magnetic-electric barrier at some specific incidence angles. These angles can be controlled by the tuning gate voltage, local magnetic field and Fermi energy of incident electrons in QWs with appropriate barrier length. This collimation feature can be used to construct momentum filters in HgTe QWs and has potential application in nanodevices.
我们研究了在由铁磁金属条产生的磁电势垒作用下 HgTe 量子阱中的电子准直行为。我们发现,电子在某些特定的入射角度下可以完美地通过磁电势垒。这些角度可以通过调节门电压、量子阱中的局域磁场和入射电子的费米能来控制,且在适当的势垒长度下。这种准直特性可用于在 HgTe 量子阱中构建动量滤波器,并在纳米器件中有潜在的应用。