MANA Nano-Electronics Materials Unit, National Institute for Materials Science, 3-13 Sakura, 305-0003 Tsukuba, Japan.
J Phys Condens Matter. 2013 Mar 6;25(9):095004. doi: 10.1088/0953-8984/25/9/095004. Epub 2013 Jan 18.
Epitaxial thin oxide layers were grown by simultaneous aluminum deposition and oxidation on a Co(0001) single crystal, and the metal-oxide interface between the substrate and the grown layer was studied using photoelectron spectroscopy. The oxide layers were composed of two kinds of chemically different layers. Angle-resolved measurements were used to determine the compositions of oxide sub-layers and to reveal their respective thicknesses. The topmost oxide layers were up to 0.23 nm thick, determined by analysis of O 1s and Co 2p(3/2) photoelectron spectra. The results of the analysis show that the interface layer is composed of a mixture of oxygen and cobalt atoms and its thickness is approximately 0.6 nm. The analysis of Co 2p(3/2), Al 2p(3/2) and O 1s core level binding energies confirmed the presence of CoO in the interface layer and Al(2)O(3) in the topmost oxide layer.
在 Co(0001)单晶上通过同时进行铝沉积和氧化生长外延的薄氧化物层，并使用光电子能谱研究了基底和生长层之间的金属氧化物界面。氧化物层由两种化学性质不同的层组成。使用角分辨测量来确定氧化物亚层的组成，并揭示其各自的厚度。最顶层的氧化物层的厚度可达 0.23nm，这是通过 O 1s 和 Co 2p(3/2)光电子能谱分析确定的。分析结果表明，界面层由氧和钴原子的混合物组成，其厚度约为 0.6nm。Co 2p(3/2)、Al 2p(3/2)和 O 1s 芯能级结合能的分析证实了界面层中存在 CoO 和最顶层氧化物层中的 Al(2)O(3)。
