Centre for Analysis and Testing, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai, 200240, China.
Nanoscale Res Lett. 2013 Jan 22;8(1):45. doi: 10.1186/1556-276X-8-45.
MnSi1.7 nanowires (NWs) with a single orientation and a large aspect ratio have been formed on a Si(110) surface with the molecular beam epitaxy method by a delicate control of growth parameters, such as temperature, deposition rate, and deposition time. Scanning tunneling microscopy (STM) was employed to study the influence of these parameters on the growth of NWs. The supply of free Si atoms per unit time during the silicide reaction plays a critical role in the growth kinetics of the NWs. High growth temperature and low deposition rate are favorable for the formation of NWs with a large aspect ratio. The orientation relationship between the NWs and the reconstruction rows of the Si(110) surface suggests that the NWs grow along the 11¯0 direction of the silicon substrate. High-resolution STM and backscattered electron scanning electron microscopy images indicate that the NWs are composed of MnSi1.7.
MnSi1.7 纳米线（NWs）具有单一取向和大纵横比，通过分子束外延方法在 Si(110)表面上形成，通过精细控制生长参数，例如温度、沉积速率和沉积时间。扫描隧道显微镜（STM）用于研究这些参数对 NWs 生长的影响。在硅化物反应过程中，单位时间内提供的自由硅原子在 NWs 的生长动力学中起着关键作用。高生长温度和低沉积速率有利于形成具有大纵横比的 NWs。NWs 与 Si(110)表面重构行之间的取向关系表明，NWs 沿着硅衬底的 11¯0 方向生长。高分辨率 STM 和背散射电子扫描电子显微镜图像表明，NWs 由 MnSi1.7 组成。
