Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan, R.O.C.
Phys Chem Chem Phys. 2013 Feb 28;15(8):2654-9. doi: 10.1039/c2cp44213b. Epub 2013 Jan 22.
The influence of the catalyst materials on the electron transport behaviors of InAs nanowires (NWs) grown by a conventional vapor transport technique is investigated. Utilizing the NW field-effect transistor (FET) device structure, ~20% and ~80% of Au-catalyzed InAs NWs exhibit strong and weak gate dependence characteristics, respectively. In contrast, ~98% of Ni-catalyzed InAs NWs demonstrate a uniform n-type behavior with strong gate dependence, resulting in an average OFF current of ~10(-10) A and a high I(ON)/I(OFF) ratio of >10(4). The non-uniform device performance of Au-catalyzed NWs is mainly attributed to the non-stoichiometric composition of the NWs grown from a different segregation behavior as compared to the Ni case, which is further supported by the in situ TEM studies. These distinct electrical characteristics associated with different catalysts were further investigated by the first principles calculation. Moreover, top-gated and large-scale parallel-array FETs were fabricated with Ni-catalyzed NWs by contact printing and channel metallization techniques, which yield excellent electrical performance. The results shed light on the direct correlation of the device performance with the catalyst choice.
采用传统气相输运技术生长的 InAs 纳米线（NWs），研究了催化剂材料对其电子输运行为的影响。利用 NW 场效应晶体管（FET）器件结构，分别有约 20%和 80%的 Au 催化 InAs NW 表现出强和弱栅极依赖性特性。相比之下，约 98%的 Ni 催化 InAs NW 表现出均匀的 n 型行为，且具有强栅极依赖性，从而产生约 10(-10) A 的平均关态电流和>10(4)的高 I(ON)/I(OFF)比。Au 催化 NW 的非均匀器件性能主要归因于与 Ni 情况相比，由不同偏析行为生长的 NW 具有非化学计量组成，这进一步得到了原位 TEM 研究的支持。通过第一性原理计算进一步研究了与不同催化剂相关的这些独特的电特性。此外，通过接触印刷和沟道金属化技术，采用 Ni 催化 NW 制备了顶栅和大规模平行阵列 FET，从而获得了优异的电性能。研究结果揭示了器件性能与催化剂选择之间的直接相关性。
