Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 90, 630090, Russia.
J Phys Condens Matter. 2013 Feb 27;25(8):085503. doi: 10.1088/0953-8984/25/8/085503. Epub 2013 Jan 23.
The investigation of valence band structure and electronic parameters of constituent element core levels of α-SrB(4)O(7) has been carried out with x-ray photoemission spectroscopy. Optical-quality crystal α-SrB(4)O(7) has been grown by the Czochralski method. Detailed photoemission spectra of the element core levels have been recorded from the powder sample under excitation by nonmonochromatic Al Kα radiation (1486.6 eV). The band structure of α-SrB(4)O(7) has been calculated by ab initio methods and compared to XPS measurements. It has been found that the band structure of α-SrB(4)O(7) is weakly dependent on the Sr-related states.
采用 X 射线光电子能谱法研究了α-SrB(4)O(7)价带结构和组成元素芯能级的电子参数。通过柴可拉斯基法生长出光学质量的α-SrB(4)O(7)晶体。用非单色 Al Kα 辐射（1486.6 eV）从粉末样品中记录下元素芯能级的详细光电子能谱。通过第一性原理方法计算了α-SrB(4)O(7)的能带结构，并与 XPS 测量结果进行了比较。结果表明，α-SrB(4)O(7)的能带结构与 Sr 相关态的关系较弱。
