Energy Efficient & Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, Nibong Tebal, Seberang Perai Selatan, Penang, 14300, Malaysia.
Nanoscale Res Lett. 2013 Jan 29;8(1):53. doi: 10.1186/1556-276X-8-53.
The effects of different post-deposition annealing ambients (oxygen, argon, forming gas (95% N2 + 5% H2), and nitrogen) on radio frequency magnetron-sputtered yttrium oxide (Y2O3) films on n-type gallium nitride (GaN) substrate were studied in this work. X-ray photoelectron spectroscopy was utilized to extract the bandgap of Y2O3 and interfacial layer as well as establishing the energy band alignment of Y2O3/interfacial layer/GaN structure. Three different structures of energy band alignment were obtained, and the change of band alignment influenced leakage current density-electrical breakdown field characteristics of the samples subjected to different post-deposition annealing ambients. Of these investigated samples, ability of the sample annealed in O2 ambient to withstand the highest electric breakdown field (approximately 6.6 MV/cm) at 10-6 A/cm2 was related to the largest conduction band offset of interfacial layer/GaN (3.77 eV) and barrier height (3.72 eV).
本工作研究了不同沉积后退火环境（氧气、氩气、形成气体（95%N2+5%H2）和氮气）对 n 型氮化镓（GaN）衬底上射频磁控溅射氧化钇（Y2O3）薄膜的影响。X 射线光电子能谱用于提取 Y2O3 和界面层的能带隙，并建立 Y2O3/界面层/GaN 结构的能带排列。得到了三种不同的能带排列结构，带排列的变化影响了样品在不同沉积后退火环境下的漏电流密度-电击穿场特性。在所研究的样品中，在 O2 环境中退火的样品在 10-6 A/cm2 时能够承受最高的电击穿场（约 6.6 MV/cm），这与界面层/GaN 的最大导带偏移（3.77 eV）和势垒高度（3.72 eV）有关。
