射频磁控溅射 Y2O3 薄膜在氮化镓上的后沉积退火环境对能带排列的影响。

Effects of post-deposition annealing ambient on band alignment of RF magnetron-sputtered Y2O3 film on gallium nitride.

机构信息

Energy Efficient & Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, Nibong Tebal, Seberang Perai Selatan, Penang, 14300, Malaysia.

出版信息

Nanoscale Res Lett. 2013 Jan 29;8(1):53. doi: 10.1186/1556-276X-8-53.

DOI:10.1186/1556-276X-8-53

PMID:23360596

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3598984/

Abstract

The effects of different post-deposition annealing ambients (oxygen, argon, forming gas (95% N2 + 5% H2), and nitrogen) on radio frequency magnetron-sputtered yttrium oxide (Y2O3) films on n-type gallium nitride (GaN) substrate were studied in this work. X-ray photoelectron spectroscopy was utilized to extract the bandgap of Y2O3 and interfacial layer as well as establishing the energy band alignment of Y2O3/interfacial layer/GaN structure. Three different structures of energy band alignment were obtained, and the change of band alignment influenced leakage current density-electrical breakdown field characteristics of the samples subjected to different post-deposition annealing ambients. Of these investigated samples, ability of the sample annealed in O2 ambient to withstand the highest electric breakdown field (approximately 6.6 MV/cm) at 10-6 A/cm2 was related to the largest conduction band offset of interfacial layer/GaN (3.77 eV) and barrier height (3.72 eV).

摘要

本工作研究了不同沉积后退火环境（氧气、氩气、形成气体（95%N2+5%H2）和氮气）对 n 型氮化镓（GaN）衬底上射频磁控溅射氧化钇（Y2O3）薄膜的影响。X 射线光电子能谱用于提取 Y2O3 和界面层的能带隙，并建立 Y2O3/界面层/GaN 结构的能带排列。得到了三种不同的能带排列结构，带排列的变化影响了样品在不同沉积后退火环境下的漏电流密度-电击穿场特性。在所研究的样品中，在 O2 环境中退火的样品在 10-6 A/cm2 时能够承受最高的电击穿场（约 6.6 MV/cm），这与界面层/GaN 的最大导带偏移（3.77 eV）和势垒高度（3.72 eV）有关。