同时氧化和氮化 Zr 膜在 Si 上的能带排列和增强击穿场。

Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si.

机构信息

Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia.

出版信息

Nanoscale Res Lett. 2011 Aug 10;6(1):489. doi: 10.1186/1556-276X-6-489.

DOI:10.1186/1556-276X-6-489

PMID:21831264

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3212003/

Abstract

The band alignment of ZrO2/interfacial layer/Si structure fabricated by simultaneous oxidation and nitridation of sputtered Zr on Si in N2O at 700°C for different durations has been established by using X-ray photoelectron spectroscopy. Valence band offset of ZrO2/Si was found to be 4.75 eV, while the highest corresponding conduction offset of ZrO2/interfacial layer was found to be 3.40 eV; owing to the combination of relatively larger bandgaps, it enhanced electrical breakdown field to 13.6 MV/cm at 10-6 A/cm2.

摘要

采用 X 射线光电子能谱法，建立了在 700°C 的 N2O 中通过同时氧化和氮化溅射在 Si 上的 Zr 来制备 ZrO2/界面层/Si 结构的能带排列，不同时间。发现 ZrO2/Si 的价带偏移量为 4.75eV，而 ZrO2/界面层的最高相应导带偏移量为 3.40eV；由于带隙较大，在 10-6A/cm2 时将电击穿场增强至 13.6MV/cm。