Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA.
Phys Rev Lett. 2012 Dec 21;109(25):256401. doi: 10.1103/PhysRevLett.109.256401. Epub 2012 Dec 17.
We report on the emergence of an electronic Griffiths phase in the doped semiconductor FeSb(2), predicted for disordered insulators with random localized moments in the vicinity of a metal-insulator transition. Magnetic, transport, and thermodynamic measurements of Fe(Sb(1-x)Te(x))(2) single crystals show signatures of disorder-induced non-Fermi liquid behavior and a Wilson ratio expected for strong electronic correlations. The electronic Griffiths phase states are found on the metallic boundary between the insulating state (x = 0) and a long-range albeit weak magnetic order (x ≥ 0.075).
我们报告了掺杂半导体 FeSb(2) 中电子 Griffiths 相的出现，这种现象预测存在于具有随机局域磁矩的无序绝缘体中，接近金属-绝缘体转变。Fe(Sb(1-x)Te(x))(2) 单晶的磁、输运和热力学测量显示出无序诱导的非费米液体行为和强电子相关的威尔逊比的特征。电子 Griffiths 相态出现在绝缘态 (x = 0) 和长程但较弱的磁有序态 (x ≥ 0.075) 之间的金属边界上。
