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低温下轻度掺杂莫特绝缘体中强烈增强的热输运。

Strongly enhanced thermal transport in a lightly doped Mott insulator at low temperature.

机构信息

Institute of Physics, Zagreb POB 304, Croatia.

出版信息

Phys Rev Lett. 2012 Dec 28;109(26):266601. doi: 10.1103/PhysRevLett.109.266601. Epub 2012 Dec 27.

Abstract

We show how a lightly doped Mott insulator has hugely enhanced electronic thermal transport at low temperature. It displays universal behavior independent of the interaction strength when the carriers can be treated as nondegenerate fermions and a nonuniversal "crossover" region where the Lorenz number grows to large values, while still maintaining a large thermoelectric figure of merit. The electron dynamics are described by the Falicov-Kimball model which is solved for arbitrary large on-site correlation with a dynamical mean-field theory algorithm on a Bethe lattice. We show how these results are generic for lightly doped Mott insulators as long as the renormalized Fermi liquid scale is pushed to very low temperature and the system is not magnetically ordered.

摘要

我们展示了轻掺杂莫特绝缘体如何在低温下极大地增强了电子热输运。当载流子可以被视为非简并费米子并且存在非普遍的“交叉”区域时,其中洛伦兹数增长到较大值,同时仍然保持较大的热电优值,它显示出与相互作用强度无关的普遍行为。电子动力学由 Falicov-Kimball 模型描述,该模型在 Bethe 晶格上使用动态平均场理论算法对任意大的局域相关进行求解。我们展示了只要重整化费米液体尺度被推到非常低的温度并且系统没有磁有序,这些结果对于轻掺杂莫特绝缘体是通用的。

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