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电压门控质子通道中电压感应的分子机制。

Molecular mechanism of voltage sensing in voltage-gated proton channels.

机构信息

Department of Physiology and Biophysics, University of Miami, Miami, FL 33136, USA. carlos.gonzalezl@uv

出版信息

J Gen Physiol. 2013 Mar;141(3):275-85. doi: 10.1085/jgp.201210857. Epub 2013 Feb 11.

Abstract

Voltage-gated proton (Hv) channels play an essential role in phagocytic cells by generating a hyperpolarizing proton current that electrically compensates for the depolarizing current generated by the NADPH oxidase during the respiratory burst, thereby ensuring a sustained production of reactive oxygen species by the NADPH oxidase in phagocytes to neutralize engulfed bacteria. Despite the importance of the voltage-dependent Hv current, it is at present unclear which residues in Hv channels are responsible for the voltage activation. Here we show that individual neutralizations of three charged residues in the fourth transmembrane domain, S4, all reduce the voltage dependence of activation. In addition, we show that the middle S4 charged residue moves from a position accessible from the cytosolic solution to a position accessible from the extracellular solution, suggesting that this residue moves across most of the membrane electric field during voltage activation of Hv channels. Our results show for the first time that the charge movement of these three S4 charges accounts for almost all of the measured gating charge in Hv channels.

摘要

电压门控质子 (Hv) 通道在吞噬细胞中通过产生超极化质子电流发挥重要作用,该电流可对 NADPH 氧化酶在呼吸爆发期间产生的去极化电流进行电补偿,从而确保 NADPH 氧化酶在吞噬细胞中持续产生活性氧物质以中和吞噬的细菌。尽管电压依赖性 Hv 电流非常重要,但目前尚不清楚 Hv 通道中的哪些残基负责电压激活。在这里,我们表明,第四跨膜域 S4 中三个带电残基的单独中和都会降低激活的电压依赖性。此外,我们还表明,中间 S4 带电残基从可从胞质溶胶中进入的位置移动到可从细胞外溶液中进入的位置,这表明在 Hv 通道的电压激活过程中,该残基穿过大部分膜电场。我们的结果首次表明,这三个 S4 电荷的电荷移动几乎占 Hv 通道中测量的全部门控电荷。

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