Department of Physics, Oklahoma State University, Stillwater, OK 74078, USA.
J Phys Condens Matter. 2013 Mar 13;25(10):105303. doi: 10.1088/0953-8984/25/10/105303. Epub 2013 Feb 14.
We propose using disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the effects of disorder are confined to only one of the graphene layers. This effect is based on the ability of the bias voltage to select which of the graphene layers carries current, and is not tied to the presence of a gap in the density of states. In particular, we demonstrate this effect in models of gapless ABA-stacked trilayer graphene, gapped ABC-stacked trilayer graphene and gapped bilayer graphene.
我们提出在偏置双层和三层石墨烯中利用无序来产生场效应晶体管 (FET)。当无序的影响仅局限于石墨烯层之一时，偏置电压的调制可以在电导中产生很大的变化。这种效应基于偏置电压选择哪个石墨烯层承载电流的能力，并且与能态密度中的间隙无关。具体来说，我们在无间隙 ABA 堆叠三层石墨烯、有间隙 ABC 堆叠三层石墨烯和有间隙双层石墨烯的模型中演示了这种效应。
