Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo, Japan.
Nanotechnology. 2013 Mar 22;24(11):115304. doi: 10.1088/0957-4484/24/11/115304. Epub 2013 Feb 28.
The growth mechanism of GaAs nanowires (NWs) grown on polycrystalline silicon (poly-Si) thin films using selective-area metalorganic vapor-phase epitaxy was investigated. Wire structures were selectively grown in the mask openings on a poly-Si substrate. The appearance ratio of wire structures strongly depended on the growth conditions and deposition temperature of the poly-Si substrate. Evaluation of the grown shapes and growth characteristics revealed that GaAs NWs grown on a poly-Si substrate have the same growth mechanism as conventional GaAs NWs grown on a single-crystalline GaAs or Si substrate. Experiments showed that the wire structure yield can be improved by increasing the Si grain size and/or increasing the Si deposition temperature. The growth model proposed for understanding NW growth on poly-Si is based on the mask opening size, the Si grain size, and the growth conditions. The ability to control the growth mode is promising for the formation of NWs with complex structures on poly-Si thin layers.
采用选择性区域金属有机气相外延法在多晶硅（poly-Si）薄膜上生长 GaAs 纳米线（NWs）的生长机制。在多晶硅衬底的掩模开口中选择性地生长了线材结构。线材结构的出现率强烈依赖于生长条件和多晶硅衬底的沉积温度。对生长形状和生长特性的评估表明，在多晶硅衬底上生长的 GaAs NWs 具有与在单晶 GaAs 或 Si 衬底上生长的常规 GaAs NWs 相同的生长机制。实验表明，通过增加 Si 晶粒尺寸和/或增加 Si 沉积温度可以提高线材结构的产率。提出的用于理解多晶硅上 NW 生长的生长模型基于掩模开口尺寸、Si 晶粒尺寸和生长条件。控制生长模式的能力有望在多晶硅薄膜上形成具有复杂结构的 NWs。
